Journal of Jishou University(Natural Sciences Edition) ›› 2020, Vol. 41 ›› Issue (5): 32-36.DOI: 10.13438/j.cnki.jdzk.2020.05.007

• Physical and information • Previous Articles     Next Articles

Quantitative Analysis of Thermal Performance Parameters of Layered Semiconductors MoSe2 and WSe2

PENG Chun, YANG Xuexian, HUANG Yonggang, WANG Xiaoyun, PENG Jinzhang   

  1. (College of Physics and Electromechanical Engineering, Jishou University, Jishou 416000, Hunan China)
  • Online:2020-09-25 Published:2021-02-04

Abstract: Based on bond order-length-strength theory and local bond average approach, the thermal parameters of the transition metals MoSe2 and WSe2 were quantitatively analyzed, and the functional relations of thermal expansion coefficient (TEC), lattice constant, thermal strain and temperature were established.It reveals the physical mechanism of the temperature effect of the thermal parameters of the layered semiconductor material: TEC is directly proportional to the Debye temperature and specific heat capacity, and is inversely proportional to the atomic cohesive energy. The lattice constant, thermal strain and temperature are linear when the temperature is higher than one third of the material's Debye temperature. Debye temperatures of MoSe2 and WSe2 were 276, 260 K.

Key words: semiconductor, layered material;thermal expansion coefficient;lattice constant, thermal strain, temperature

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