Abstract: Based on the first-principles calculation method of combining the density functional theory and the Non-equilibrium Green's function,the effect of Se and Te atom substitution doping on the electronic transport properties of WS₂-MoS₂ nanodevice is studied.The results show that the WS₂-MoS₂ nanodevice has interesting negative differential resistance effect in the bias range of [+0.7 V,+1.0 V] and [-1 V,-0.9 V],with the current gradually decreasing with the increase of bias voltage,and the electronic transport properties of the device show indirect gap semiconductor characteristics.The device can be converted into p-type semiconductor when replaing the S-atoms in WS₂-MoS₂ composite nanodevice with Se-atoms.When the S-atoms in WS₂-MoS₂ composite nanodevice is partially doped with substitutional Te-atoms,the device is converted into p-type semiconductor or even metal,and its conductivity is greatly improved.The partial substitution doping of WS₂-MoS₂ nanodevice with Se and Te atoms exhibits a negative differential resistance effect,and the passing of currents across the devices is significantly improved.

Key words: nanodevice, semiconductor, electronic transport, regulation, negative differential resistance effect