journal6 ›› 2015, Vol. 36 ›› Issue (3): 32-34.DOI: 10.3969/j.cnki.jdxb.2015.03.008

• Physics and electronics • Previous Articles     Next Articles

A First Principle Study of Local Magnetic Moment on Non-Magnetic Elements Doped AlN

 YANG  Hong, QUAN  Xiu-E   

  1. (College of Physics and Mechanical & Electrical Engineering,Jishou University,Jishou 416000,Hunan China)
  • Online:2015-05-25 Published:2015-06-03

Abstract: The ideal diluted magnetic semiconductors has favorable room-temperature ferromagnetism.Although AlN diluted magnetic semiconductor has wide band gap and good light-admitting quality,it has not been widely applied due to the unsatisfactory replicability of the experiment.Based on first principle of the density functional theory,we calculate the electric structure of AlN semiconductors doped by B element.The analysis of the calculated electric structure displays that an evident local magnetic moment change arises on doped AlN semiconductors.The magnitude of the local magnetic moment is 2 μB.

Key words: diluted magnetic semiconductors, AlN, first principle

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