journal6 ›› 2013, Vol. 34 ›› Issue (3): 31-34.DOI: 10.3969/j.issn.1007-2985.2013.03.007

• Physics and electrical engineering • Previous Articles     Next Articles

Effect of Buffer Layers on the Properties of Al-Doped ZnO Films


  1. (College of Physics and Electronic Engineering,Jishou University,Jishou 416000,Hunan  China)
  • Online:2013-05-25 Published:2013-07-18

Abstract: AZO films with Al2O3 and ZnO buffer layers were deposited by RF magnetron sputtering.The structure and optoelectronic properties of AZO films were analyzed by some characterization instruments,such as X-ray diffractometer (XRD),scanning electron micro-scope (SEM),UV-visible spectrophotometer,Hall test.The results show that the films with buffer layers have better c-axis preferred orientation,and smooth surface.The crystal quality has been improved.The transmittance of films is over 80% in the visible range.AZO films deposited on ZnO buffer layer have the lowest resistivity of 5.8×10-4 Ω·cm,and the conductive property of the films is improved obviously.

Key words: AZO thin film, buffer layer, transmittance, optoelectronic properties

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