Macro-Model of Single-Electron Transistor Based on Voltage-Controlled Unit
(1.Hunan Vocational College of Engineering and Technology,Changsha 410151,China;2.School of Physics and Microelectronics Science,Hunan University,Changsha 410082,China)
ZHOU Shao-Hua, XIONG Qi, YANG Hong-Guan, DAI Da-Kang, ZENG Jian-Ping, ZENG Yun. Macro-Model of Single-Electron Transistor Based on Voltage-Controlled Unit[J]. journal6, 2009, 30(6): 63-65.
[1] AVERIN D V,LIKHAVE K K.Coulomb Blokade of Single-Electron Tunneling,and Coherent Ocsillations in Small Tunnel Junction [J].Journal of Low Temperature Physics,1986,62(3/4):345-373.[2] 沈波,蒋建飞,蔡琪玉.电容耦合单电子晶体管有源负载 [J].电子学报,1999,27(11):65-67.[3] PUGLISI R A,LOMBARDO S,CORSO D,et al.Effects of Partial Self-Ordering of Si Dots Formed by Chemical Vapor Deposition on the Threshold Voltage Window Distribution of Si Nanocrystal Memories [J].J. Appl. Phys.,2006,100(8):86-104.[4] K ROK KIM,SONG Ki-WHAN,DAE HWAN KIM.Analytical Modeling of Realistic Single-Electron Transistors Based on Metal-Oxide-Semi Conductor Structure with a Unique Distribution Function in the Coulomb-Blockade Osillation Region [J].Jap. Journal of Applied Physics,2004,43(4B):20-31.[5] MAHA S A.Quasi-Analytical SET Model for Few Electron Circuit Simulation [J].IEEE Electron Device Letters,2002,23:366.