journal6 ›› 2006, Vol. 27 ›› Issue (1): 107-109.

• Chemistry and chemical engineering • Previous Articles     Next Articles

Preparation of Bi2Ti2O7 Thin Film and Its Application in Insulation Gate Field Effect Transistor


  1. (College of Chemistry and Chemical Engineering,Jishou University,Jishou 416000,Hunan China)
  • Online:2006-01-25 Published:2012-09-16

Abstract: The Bi2Ti2O7 thin film was successfully prepared by chemical solution deposition technique on n-Si (100) using bismuth nitrate and titanium butoxide as the starting materials.The film presents very good insulating property and has relatively high dielectric constant.Compared with the SiO2 insulation gate field effect transistor of the same size,it  can greatly increase the transconductance and lower the   cut-in voltage.

Key words: Bi2Ti2O7thin film;dielectric constant, insulation gate field effect transistor

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