Abstract: The Bi₂Ti₂O₇ thin film was successfully prepared by chemical solution deposition technique on n-Si (100) using bismuth nitrate and titanium butoxide as the starting materials.The film presents very good insulating property and has relatively high dielectric constant.Compared with the SiO₂ insulation gate field effect transistor of the same size,it  can greatly increase the transconductance and lower the   cut-in voltage.

Key words: Bi₂Ti₂O₇thin film；dielectric constant, insulation gate field effect transistor