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Published in last 1 year |  In last 2 years |  In last 3 years |  All Please wait a minute... For Selected: Download Citations EndNote Ris BibTeX Toggle Thumbnails Select Effect of Metal Doping on the Rectification Characteristics of CdTe Nanodevices YANG Jinbiao, LIAO Wenhu, BAO Hairui Journal of Jishou University(Natural Sciences Edition)    2023, 44 (6): 75-79.   DOI: 10.13438/j.cnki.jdzk.2023.06.012 Abstract （84）      PDF（pc） （2326KB）（109）       Knowledge map    Save Based on density functional theory combined with non-equilibrium Green's function,the voltammetric properties of transition metal Cu-Cr,Cu-V and Cu-Ti co-doped CdTe nanoelectronic devices were systematically investigated.The results show that the voltammetric curves of the three different co-doped CdTe nanodevices exhibit diode voltammetric curves and produce strong rectification effects in the bias voltage range of [+0.4 V,+0.8 V].The highest rectification ratios are 5.4×104,3.8×105,and 2.1×106,respectively.The projected density of states further confirms the high rectification ratio of the device at +1.0 V bias.Under the Cu-Cr co-doping condition,the device current decreases somewhat at +0.9 V bias with increasing channel length in the center region,but the overall rectification performance is significantly improved in the [+0.5 V,+0.7 V] bias range. Reference | Related Articles | Metrics | Comments（0） Select Manipulation of the Band Structure of Weyl Semimetals by Electric and Magnetic Fields LUO Shuzhen, LIAO Wenhu, BAO Hairui Journal of Jishou University(Natural Sciences Edition)    2023, 44 (6): 80-89.   DOI: 10.13438/j.cnki.jdzk.2023.06.013 Abstract （120）      PDF（pc） （3303KB）（143）       Knowledge map    Save Based on the low-energy effective hamiltonian model under the tight-binding approximation,the modulation of the electronic band structure of weyl semimetals by applied electric and/or magnetic fields is investigated.The results show that:when only the positive (negative) electric field is applied,the weyl points of system gradually move towards the boundary (center) of the brillouin zone with the increasing of the electric field strength,and when the electric field strength increases to a certain extent,the semimetal-semiconductor (insulator) transition can be relieazed;when only the magnetic field is applied,the weyl semimetal can form the discrete landau levels,the n=0 subband does not change with the increasing of magnetic length while the n≠0 subband gradually approaches the fermi level with the increasing of magnetic length,and the band gap between the conduction and valence bands with same indices gradually decrease;when the magnetic length remains unchanged,the weyl points of system gradually move towards the boundary (center) of the brillouin zone with the increasing of the positive (negative) electric field strength.Under the appropriate electric field,the n=0 subband can change from partially occupied valence band to first conduction band (fully occupied first valence band) and realize the semimetal-semiconductor or semimetal-insulator transitions. Reference | Related Articles | Metrics | Comments（0）