Journal of Jishou University(Natural Sciences Edition) ›› 2025, Vol. 46 ›› Issue (4): 73-80.DOI: 10.13438/j.cnki.jdzk.2025.04.011

• Functional Materials • Previous Articles     Next Articles

Vacancy and Doping Modulation Photogalvanic Effect in α-Se Photodetector

WU Xiuwen,LIAO Wenhu   

  1. (College of Communication and Electronic Engineering,Jishou University,Jishou 416000,Hunan China)
  • Online:2025-07-25 Published:2025-08-05

Abstract: First-principles calculations of nonequilibrium Green's function combined with density functional theory are utilized to investigate the photogalvanic effects of α-Se photodetectors in the presence of single-atom vacancies,two-atom vacancies,and doping with Te,W,As,and Cd atoms.The results demonstrate that the single-atom vacancy can break the spatial symmetry of the device more greatly and generate stronger photocurrent.The maximum photoresponse of 32.61 a20/photon is obtained by doping with As atoms,and the extinction ratio of the device reaches 184.9 when Se atom are replaced by Cd atom,and the device possesses a more sensitive visible-light absorption along the y-direction,and the maximum photoresponse in y-direction is 1 369 times higher than that along the x-direction,showing an excellent anisotropic photoresponse.

Key words: α-Se, photodetectors, photogalvanic effects, anisotropic

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