Journal of Jishou University(Natural Sciences Edition) ›› 2023, Vol. 44 ›› Issue (6): 75-79.DOI: 10.13438/j.cnki.jdzk.2023.06.012

• Topological Quantum Technology • Previous Articles     Next Articles

Effect of Metal Doping on the Rectification Characteristics of CdTe Nanodevices

YANG Jinbiao,LIAO Wenhu,BAO Hairui   

  1. (1.School of Communication and Electronic Engineering,Jishou University,Jishou 416000,Hunan China;2.College of Physics and Electromechanical Engineering,Jishou University,Jishou 416000,Hunan China)
  • Online:2023-11-25 Published:2023-12-19

Abstract: Based on density functional theory combined with non-equilibrium Green's function,the voltammetric properties of transition metal Cu-Cr,Cu-V and Cu-Ti co-doped CdTe nanoelectronic devices were systematically investigated.The results show that the voltammetric curves of the three different co-doped CdTe nanodevices exhibit diode voltammetric curves and produce strong rectification effects in the bias voltage range of [+0.4 V,+0.8 V].The highest rectification ratios are 5.4×104,3.8×105,and 2.1×106,respectively.The projected density of states further confirms the high rectification ratio of the device at +1.0 V bias.Under the Cu-Cr co-doping condition,the device current decreases somewhat at +0.9 V bias with increasing channel length in the center region,but the overall rectification performance is significantly improved in the [+0.5 V,+0.7 V] bias range.

Key words: CdTe, transition metal doping, voltammetric properties, rectification

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