Doping Regulation of Rectification Characteristics of GeSe Nanoelectronic Devices

doi:10.13438/j.cnki.jdzk.2022.04.008

Abstract

Abstract: The rectification characteristics of GeSe nanoelectronic devices with different channel length of the central semiconductor doped with group V atomic substitution is investigated by using a combination of density general function theory and nonequilibrium Green's function.Results that:under positive bias,the current of armchair germanium selenide nanoribbons with 5.1 nm central semiconductor channel lengths increases with increasing voltage;while under negative bias,the current does not vary with voltage as the central semiconductor channel length increases from 1.7 nm to 3.4 nm;the magnitude is close to zero when the channel length of the central semiconductor continues to increase,and the devices exhibit significant rectification characteristics.

Key words: GeSe nanoribbons, rectification, substitution doping, current-voltage characteristics

CHENG Yangming, LIAO Wenhu. Doping Regulation of Rectification Characteristics of GeSe Nanoelectronic Devices[J]. Journal of Jishou University(Natural Sciences Edition), 2022, 43(4): 42-46.

References

[1] ZHAO Yun,CHEN Yong,ZHANG Yehua,et al.Recent Advance in Black Phosphorus:Properties and Applications[J].Materials Chemistry and Physics,2017,189:215-229.
[2] SCHEDIN F,GEIM A K,MOROZOV S V,et al.Detection of Individual Gas Molecules Adsorbed on Graphene[J].Nature Materials,2007,6(9):652-655.
[3] WANG Tonghui,ZHU Yongfu,JIANG Qing.Bandgap Opening of Bilayer Graphene by Dual Doping from Organic Molecule and Substrate[J].The Journal of Physical Chemistry C,2013,117(24):12873-12881.
[4] ZHANG Shengli,WANG Ning,LIU Shangguo,et al.Two-Dimensional GeS with Tunable Electronic Properties via External Electric Field and Strain[J].Nanotechnology,2016,27(27):274001.DOI:10.1088/0957-4484/27/27/274001.
[5] DING Yi,WANG Yanli.Tunable Electronic Structures of Germanium Monochalcogenide Nanosheets via Light Non-Metallic Atom Functionalization:A First-Principles Study[J].Physical Chemistry Chemical Physics,2016,18(33):23080-23088.
[6] SINGH ARUNIMA K,HENNIG RICHARD G.Computational Prediction of Two-Dimensional Group-IV Mono-Chalcogenides[J].Applied Physics Letters,2014,105(4):042103.DOI:10.1063/1.4891230.
[7] HUANG Le,WU Fugen,LI Jingbo.Structural Anisotropy Results in Atrain-Tunable Electronic and Optical Properties in Monolayer GeX and SnX (X=S,Se,Te)[J].The Journal of Chemical Physics,2016,144(11):114708.DOI:10.1063/1.4943969.
[8] MA Zhinan,WANG Bo,OU Liangkai,et al.Structure and Properties of Phosphorene-Like IV-VI 2D Materials[J].Nanotechnology,2016,27(41):415203.DOI:10.1088/0957-4484/27/41/415203.
[9] LI Zeyu,LIU Mingyang,HUANG Yang,et al.Tuning the Electronic Properties of Bilayer Group-IV Monochalcogenides by Stacking Order,Strain and an Electric Field:A Computational Study[J].Physical Chemistry Chemical Physics,2018,20(1):214-220.
[10] VAUGHN D D,PATEL R J,HICKNER M A,et al.Single-Crystal Colloidal Nanosheets of GeS and GeSe[J].Journal of the American Chemical Society,2010,132(43):15170-15172.
[11] OLIVEIRA I S S,LONGUINHOS R.Effects of Oxygen Contamination on Monolayer GeSe:A Computational Study[J].Physical Review B,2016,94(3):035440.DOI:10.1103/PhysRevB.94.035440.
[12] LI Rui,CAO Hong,DONG Jinming.Electronic Properties of Group-IV Monochalcogenide Nanoribbons:Studied from First-Principles Calculations[J].Physics Letters A,2017,381(44):3747-3753.
[13] ZHU Yingmei,WANG Xiaocha,MI Wenbo.Two-Dimensional M2SD (M=Ge,Sn;D=Se,Te) Monolayers with Puckered Structure:Electronic Structure and Optical Properties[J].Physica E:Low-Dimensional Systems and Nanostructures,2020,117:113802.DOI:10.1016/j.physe.2019.113802.
[14] LOPEZ-BEZANILLA A.Effect of Atomic-Scale Defects and Dopants on Phosphorene Electronic Structure and Quantum Transport Properties[J].Physical Review B,2016,93(3):035433.DOI:10.1103/PhysRevB.93.035433.
[15] FAN Zhiqiang,JIANG Xiangwei,WEI Zhongming,et al.Tunable Electronic Structures of GeSe Nanosheets and Nanoribbons[J].The Journal of Physical Chemistry C,2017,121(26):14373-14379.
[16] LI Yu,MA Kuan,FAN Xing,et al.Enhancing Thermoelectric Properties of Monolayer GeSe via Strain-Engineering:A First Principles Study[J].Applied Surface Science,2020,521:146256.DOI:10.1016/j.apsusc.2020.146256.
[17] ZHANG Jialin,HAN Cheng,HU Zehua,et al.2D Phosphorene:Epitaxial Growth and Interface Engineering for Electronic Devices[J].Advanced Materials,2018,30(47):1802207.DOI:10.1002/adma.201802207.
[18] GUO Gang,SHI Yimin,ZHANG Yong,et al.First-Principles Study on the Electronic and Magnetic Properties of P Edge-Doped Armchair Germanium Selenide Nanoribbon[J].Computational Materials Science,2020,172:109348.DOI:10.1016/j.commatsci.2019.109348.
[19] GUO Caixia,HAO Shouliang,WANG Fang,et al.Tuning the Electronic Structures and Anisotropic Transport Behaviors of GeSe Monolayer by Substitutional Doping[J].Semiconductor Science and Technology,2021,36(6):065020.DOI:10.1088/1361-6641/abfd18.
[20] MAO Yuliang,GUO Gang,YUAN Jianmei,et al.Edge-Doping Effects on the Electronic and Magnetic Properties of Zigzag Germanium Selenide Nanoribbon[J].Applied Surface Science,2019,464:236-242.
[21] BUTTIKERE M.Four-Terminal Phase-Coherent Conductance[J].Physical Review Letters,1986,57(14):1761.DOI:10.1103/PhysRevLett.57.1761.