Journal of Jishou University(Natural Sciences Edition) ›› 2022, Vol. 43 ›› Issue (4): 42-46.DOI: 10.13438/j.cnki.jdzk.2022.04.008

• Physics • Previous Articles     Next Articles

Doping Regulation of Rectification Characteristics of GeSe Nanoelectronic Devices

CHENG Yangming,LIAO Wenhu   

  1. (1.School of Information Science and Engineering,Jishou University,Jishou 416000,Hunan China;2.School of Physics and Electromechanical Engineering,Jishou University,Jishou 416000,Hunan China)
  • Online:2022-07-25 Published:2022-10-28

Abstract: The rectification characteristics of  GeSe nanoelectronic devices with different channel length of the central semiconductor doped with group V atomic substitution is investigated by using a combination of density general function theory and nonequilibrium Green's function.Results that:under positive bias,the current of armchair germanium selenide nanoribbons with 5.1 nm central semiconductor channel lengths increases with increasing voltage;while under negative bias,the current does not vary with voltage as the central semiconductor channel length increases from 1.7 nm to 3.4 nm;the magnitude is close to zero when the channel length of the central semiconductor continues to increase,and the devices exhibit significant rectification characteristics.

Key words: GeSe nanoribbons, rectification, substitution doping, current-voltage characteristics

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