The Modified of the X-Ray Diffraction Intensity Formula

doi:10.3969/j.issn.1007-2985.2012.01.011

Abstract

Abstract: The X-ray diffraction technology has been widely applied in phase identification,the determination of lattice parameters and the testing of the microstress.In order to precisely determine the physical parameters,the calculation of the X-ray diffraction intensity is very important.At present,comparedg with the experimental data,the theoretical results of the X-ray diffraction intensity formula have a large deviation.In this paper,the X-ray diffraction intensity formula has been modified reasonably and the improved results of the theoretical are in good accordance with the experimental data.

Key words: the X-ray diffraction, crystal structure, revise

BA Nuo, GAO Hai-Xin, LIU Xiao-Jing, WU Xiang-Yao, ZHANG Yu-Mei, ZHANG Si-Qi, WANG Jing, GUO Yi-Qing. The Modified of the X-Ray Diffraction Intensity Formula[J]. journal6, 2012, 33(1): 41-45.

References

[1] TRAMPERT A,BRANDT O,YANG H.et al.Direct Observation of the Inital Nucleation and Epitaxial Growth of Metastable Cubic Gan on Gaas(001) [J].Appl. Phys. Lett.,1997,70(5):583.

[2] TRAMPERT A,BRANDT O,PLOOG K H.Phase Tansformations and Phase Stability In Epitaxial β-Gan Films [J].Angew. Chem. Int. Ed. Engl.,1997,36(19):2 111.

[3] SUN X L,YANG H,ZHENG L X.Stability Investigation of Cubic Gan Films Grown By Mocvd Gaas(100) [J].Appl. Phys. Lett.,1999,74(19):2 827.

[4] GIEHLER M,RAMSTERINER M,BRANDT O,et al.Optical Phonons of Hexagonal and Cubic Gan Studied By Infrared Transmission and Raman Spectroscopy [J].Appl. Phys. Lett.,1995,67(6):733.

[5] MORET M,RUTTENACH-CLUR S,MOREAUD N,et al.MOCVD Growth of Cubic Gallium Nitride:Effect of V/Ⅲ Ratio [J].Phys. Stal. Sol. (a),1999,176:493.

[6] BALAKRISHNAN K,FEUILLET G,OHTA K,et al.,Structural Analysis of Cubic Gan Through X-Ray Pole Figure Generation [J].Jpn. J. Appl. Phys.,1997,36(10):6 221.

[7] QIN Zhi-xin,KOBAYASHI M,YOSHIKAWA A.X-Ray Diffraction Reciprocal Space and Pole Figure Characterization of Cubic Gan Epitaxial Layers Grown on (001) Gaas by Molecular Beam Epitaxy [J].J. Mater. Sci.,1999,109:199.

[8] LI Z Q,CHEN H,LIU H F,et al.,MBE Growth and X-Ray Study of High-Quality Cubic-Gan on Gaas(001) [J].J. Crys. Growth,2000,208:786.

[9] 〖JP2〗NAGAYAMA A,KATAYAMA R,NAKANAN N,et al.,Substrate Misorientation Dependence of the Hexagonal Phase Inclusion in Cubic Gan Films Grown By Metalorganic Vapor Phase Epitaxy [J].Phys. Stat. Sol. (a),1999,176:513.

[10] 范雄.金属X射线衍射学 [M].北京:机械工业出版社，1998.

[11] 马世良.金属X射线衍射学 [M].西北工业大学出版社，1997.

[12] 刘粤惠，刘平安.X射线衍射分析原理与应用 [M].北京:化学工业出版社，2006.

[13] 许顺生.金属X射线学 [M].上海：上海科学技术出版社，1964.