层状半导体MoSe2/WSe2热学性能参数定量分析

doi:10.13438/j.cnki.jdzk.2020.05.007

吉首大学学报（自然科学版） ›› 2020, Vol. 41 ›› Issue (5): 32-36.DOI: 10.13438/j.cnki.jdzk.2020.05.007

层状半导体MoSe₂/WSe₂热学性能参数定量分析

彭春，杨学弦，黄勇刚，王小云，彭金璋

（吉首大学物理与机电工程学院，湖南吉首 416000）

出版日期:2020-09-25 发布日期:2021-02-04
通讯作者: 杨学弦(1984—)，男，湖南常德人，吉首大学物理与电子工程学院副教授，博士，主要从事凝聚态物理研究.
基金资助:
国家自然科学基金资助项目(11602094，11964010，11564013)；湖南省自然科学基金资助项目（2019JJ50485）

Quantitative Analysis of Thermal Performance Parameters of Layered Semiconductors MoSe₂ and WSe₂

PENG Chun, YANG Xuexian, HUANG Yonggang, WANG Xiaoyun, PENG Jinzhang

(College of Physics and Electromechanical Engineering, Jishou University, Jishou 416000, Hunan China)

Online:2020-09-25 Published:2021-02-04

摘要/Abstract

摘要：利用键弛豫理论与局域键平均近似方法对过渡金属MoSe₂和WSe2的热学参数进行了定量分析，建立了热膨胀系数、晶格常数、热应变分别与温度的函数关系式，揭示了层状半导体材料热学参量的温度效应物理机制，并获得了块体MoSe2和WSe2的德拜温度分别为276，260 K.实验结果表明，热膨胀系数与德拜比热成正比，与原子结合能成反比；温度高于材料的德拜温度的1/3时，晶格常数、热应变与温度呈线性关系.

关键词： 半导体, 层状材料, 热膨胀系数, 晶格常数, 热应变, 温度

Abstract: Based on bond order-length-strength theory and local bond average approach, the thermal parameters of the transition metals MoSe₂ and WSe₂ were quantitatively analyzed, and the functional relations of thermal expansion coefficient (TEC), lattice constant, thermal strain and temperature were established.It reveals the physical mechanism of the temperature effect of the thermal parameters of the layered semiconductor material: TEC is directly proportional to the Debye temperature and specific heat capacity, and is inversely proportional to the atomic cohesive energy. The lattice constant, thermal strain and temperature are linear when the temperature is higher than one third of the material's Debye temperature. Debye temperatures of MoSe₂ and WSe₂ were 276, 260 K.

Key words: semiconductor, layered material;thermal expansion coefficient;lattice constant, thermal strain, temperature

彭春, 杨学弦, 黄勇刚, 王小云, 彭金璋. 层状半导体MoSe₂/WSe₂热学性能参数定量分析[J]. 吉首大学学报（自然科学版）, 2020, 41(5): 32-36.

PENG Chun, YANG Xuexian, HUANG Yonggang, WANG Xiaoyun, PENG Jinzhang. Quantitative Analysis of Thermal Performance Parameters of Layered Semiconductors MoSe₂ and WSe₂[J]. Journal of Jishou University(Natural Sciences Edition), 2020, 41(5): 32-36.

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层状半导体MoSe₂/WSe₂热学性能参数定量分析

Quantitative Analysis of Thermal Performance Parameters of Layered Semiconductors MoSe₂ and WSe₂

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