Se与Te替位掺杂对WS2-MoS2纳米器件电子输运性质的影响

doi:10.13438/j.cnki.jdzk.2023.01.003

吉首大学学报（自然科学版） ›› 2023, Vol. 44 ›› Issue (1): 14-23.DOI: 10.13438/j.cnki.jdzk.2023.01.003

Se与Te替位掺杂对WS₂-MoS₂纳米器件电子输运性质的影响

林丽娥，廖文虎

(吉首大学物理与机电工程学院，湖南吉首 416000)

出版日期:2023-01-25 发布日期:2023-04-10
通讯作者: 廖文虎(1978—)，男，湖北宜昌人，吉首大学物理与机电工程学院教授，硕士生导师，主要从事介观纳米体系量子输运及其调控研究.
作者简介:林丽娥(1994—)，女，贵州毕节人，吉首大学物理与机电工程学院硕士研究生，主要从事介观量子输运及其调控研究
基金资助:
国家自然科学基金资助项目(11264013)；湖南省自然科学基金面上项目(2021JJ30549)；湖南省教育厅重点项目(18A293)；吉首大学研究生科研项目(JDY20031，JGY202108)

Effect of Se and Te Substitution Doping on Electronic Transport Properties of WS₂-MoS₂ Nanodevices

LIN Li'e,LIAO Wenhu

(School of Physics and Electromechanical Engineering,Jishou University,Jishou 416000,Hunan China)

Online:2023-01-25 Published:2023-04-10

摘要/Abstract

摘要：基于密度泛函理论与非平衡格林函数相结合的第一性原理计算方法，研究了Se与Te原子替位掺杂对WS₂-MoS₂纳米器件电子输运性质的影响.结果表明，WS₂-MoS₂纳米器件为间接带隙半导体，器件电流在[+0.7 V，+1.0 V]与[-1.0 V，-0.9 V]偏压范围内随着偏压的增大逐渐减小，呈现显著的负微分电阻效应；Se与Te原子对WS₂-MoS₂纳米器件进行替位掺杂后均呈现有趣的负微分电阻效应，器件两端电流的隧穿也显著改善；Se原子对WS₂-MoS₂纳米器件中S原子进行替位掺杂时，器件转化为p型半导体；Te原子对WS₂-MoS₂纳米器件中S原子进行替位掺杂时，器件转化为p型半导体甚至金属，且导电性能大幅提升.

关键词： 纳米器件, 半导体, 电子输运, 调控, 负微分电阻效应

Abstract: Based on the first-principles calculation method of combining the density functional theory and the Non-equilibrium Green's function,the effect of Se and Te atom substitution doping on the electronic transport properties of WS₂-MoS₂ nanodevice is studied.The results show that the WS₂-MoS₂ nanodevice has interesting negative differential resistance effect in the bias range of [+0.7 V,+1.0 V] and [-1 V,-0.9 V],with the current gradually decreasing with the increase of bias voltage,and the electronic transport properties of the device show indirect gap semiconductor characteristics.The device can be converted into p-type semiconductor when replaing the S-atoms in WS₂-MoS₂ composite nanodevice with Se-atoms.When the S-atoms in WS₂-MoS₂ composite nanodevice is partially doped with substitutional Te-atoms,the device is converted into p-type semiconductor or even metal,and its conductivity is greatly improved.The partial substitution doping of WS₂-MoS₂ nanodevice with Se and Te atoms exhibits a negative differential resistance effect,and the passing of currents across the devices is significantly improved.

Key words: nanodevice, semiconductor, electronic transport, regulation, negative differential resistance effect

林丽娥, 廖文虎. Se与Te替位掺杂对WS₂-MoS₂纳米器件电子输运性质的影响[J]. 吉首大学学报（自然科学版）, 2023, 44(1): 14-23.

LIN Li'e, LIAO Wenhu. Effect of Se and Te Substitution Doping on Electronic Transport Properties of WS₂-MoS₂ Nanodevices[J]. Journal of Jishou University(Natural Sciences Edition), 2023, 44(1): 14-23.

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Se与Te替位掺杂对WS₂-MoS₂纳米器件电子输运性质的影响

Effect of Se and Te Substitution Doping on Electronic Transport Properties of WS₂-MoS₂ Nanodevices

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