| [1] TRAMPERT A,BRANDT O,YANG H.et al.Direct Observation of the Inital Nucleation and Epitaxial Growth of Metastable Cubic Gan on Gaas(001) [J].Appl. Phys. Lett.,1997,70(5):583.[2] TRAMPERT A,BRANDT O,PLOOG K H.Phase Tansformations and Phase Stability In Epitaxial β-Gan Films [J].Angew. Chem. Int. Ed. Engl.,1997,36(19):2 111.[3] SUN X L,YANG H,ZHENG L X.Stability Investigation of Cubic Gan Films Grown By Mocvd Gaas(100) [J].Appl. Phys. Lett.,1999,74(19):2 827.[4] GIEHLER M,RAMSTERINER M,BRANDT O,et al.Optical Phonons of Hexagonal and Cubic Gan Studied By Infrared Transmission and Raman Spectroscopy [J].Appl. Phys. Lett.,1995,67(6):733.[5] MORET M,RUTTENACH-CLUR S,MOREAUD N,et al.MOCVD Growth of Cubic Gallium Nitride:Effect of V/Ⅲ Ratio [J].Phys. Stal. Sol. (a),1999,176:493.[6] BALAKRISHNAN K,FEUILLET G,OHTA K,et al.,Structural Analysis of Cubic Gan Through X-Ray Pole Figure Generation [J].Jpn. J. Appl. Phys.,1997,36(10):6 221.[7] QIN Zhi-xin,KOBAYASHI M,YOSHIKAWA A.X-Ray Diffraction Reciprocal Space and Pole Figure Characterization of Cubic Gan Epitaxial Layers Grown on (001) Gaas by Molecular Beam Epitaxy [J].J. Mater. Sci.,1999,109:199.[8] LI Z Q,CHEN H,LIU H F,et al.,MBE Growth and X-Ray Study of High-Quality Cubic-Gan on Gaas(001) [J].J. Crys. Growth,2000,208:786.[9] 〖JP2〗NAGAYAMA A,KATAYAMA R,NAKANAN N,et al.,Substrate Misorientation Dependence of the Hexagonal Phase Inclusion in Cubic Gan Films Grown By Metalorganic Vapor Phase Epitaxy [J].Phys. Stat. Sol. (a),1999,176:513.[10] 范雄.金属X射线衍射学 [M].北京:机械工业出版社，1998.[11] 马世良.金属X射线衍射学 [M].西北工业大学出版社，1997.[12] 刘粤惠，刘平安.X射线衍射分析原理与应用 [M].北京:化学工业出版社，2006.[13] 许顺生.金属X射线学 [M].上海：上海科学技术出版社，1964. |
