The Influences of the Thermal Expansion on the Energy Band Structure of a Solid
( 1. Department of Physics, Xiangtan University, Xiangtan 411105, Hunan China; 2. Department of Physics and Electronic Engineering, Jishou University, Jishou 416000,Hunan China)
LI De-Jun, TANG Yi, YE Fu-Qiu, ZHAO He-Ping, ZHOU Xiu-Wen. The Influences of the Thermal Expansion on the Energy Band Structure of a Solid[J]. journal6, 2004, 25(1): 71-74.
[ 1] 沈学础. 半导体的光学性质[M] . 北京: 科学出版社, 1992. 131- 140.[ 2] FAN H Y. Temperature Dependence of the Energy Gap in Semiconductors[ J] . Phys. Rev. , 1951, 82: 900.[ 3] COHEN M L, TSANG Y W. Calculation of the Temperature Dependence of the Energy Gaps in PbTe and SnTe[ J] . Phys. Rev. , 1971,B3: 1 254.[ 4] SCHLUTER M, MARTINZE G, COHEN M L. Pressure and Temperature Dependence of Electronic Energy Levels in PbSe and PbTe[ J] . Phys. Rev. , 1975, B12: 650.[ 5] ALLEN P B,HEINE V. Theory of the Temperature Dependence of Electronic Band Structures[ J] . J. Phys. , 1976, C9: 2 305.[ 6] CHADIAND D J, COHEN M L. Electronic Structure of Hg1- x Cdx Te Alloys and Charge- Density Calculations Using Representative k Points[ J] . Phys. Rev. , 1973, B7: 692.[ 7] GUENZER C S, BIENENSTOCK A. Temperature Dependence of the Energy Gap in Semiconductors[ J] . Phys. Rev. , 1973, B8: 4 655.[ 8] HEINE V, VAN VECHTEN J A. Effect of Electron- Hole Pairs on Phonon Frequencies in Si Related to Temperature Dependence of Band Gaps[ J] . Phys. Rev. , 1976, B3: 1 622.[ 9] 徐光宪, 黎乐民, 王德民. 量子化学[M] . 北京: 科学出版社, 1999. 543- 552.[ 10] 方俊鑫, 陆栋. 固体物理学[M] . 上海: 上海科学技术出版社, 1980. 250- 252.[ 11] 褚圣麟. 原子物理学[M] . 北京: 人民教育出版社, 1979. 115- 120.
