关键词： 碲化镉, 过渡金属掺杂, 伏安特性, 整流

Abstract: Based on density functional theory combined with non-equilibrium Green's function,the voltammetric properties of transition metal Cu-Cr,Cu-V and Cu-Ti co-doped CdTe nanoelectronic devices were systematically investigated.The results show that the voltammetric curves of the three different co-doped CdTe nanodevices exhibit diode voltammetric curves and produce strong rectification effects in the bias voltage range of [+0.4 V,+0.8 V].The highest rectification ratios are 5.4×10⁴,3.8×10⁵,and 2.1×10⁶,respectively.The projected density of states further confirms the high rectification ratio of the device at +1.0 V bias.Under the Cu-Cr co-doping condition,the device current decreases somewhat at +0.9 V bias with increasing channel length in the center region,but the overall rectification performance is significantly improved in the [+0.5 V,+0.7 V] bias range.

Key words: CdTe, transition metal doping, voltammetric properties, rectification