缓冲层对AZO薄膜的性能影响

doi:10.3969/j.issn.1007-2985.2013.03.007

journal6 ›› 2013, Vol. 34 ›› Issue (3): 31-34.DOI: 10.3969/j.issn.1007-2985.2013.03.007

缓冲层对AZO薄膜的性能影响

（吉首大学物理与机电工程学院，湖南吉首 416000）

出版日期:2013-05-25 发布日期:2013-07-18
通讯作者: 赵鹤平（1966-），男（土家族），湖南张家界人，吉首大学物理与机电工程学院教授，硕导，主要从事凝聚态物理研究.
作者简介:李长山（1987-），男，黑龙江哈尔滨人，吉首大学物理与机电工程学院硕士生，主要从事凝聚态物理研究
基金资助:
湖南省自然科学基金资助项目（09JJ6011）；湖南省高等学校科研基金资助项目（08A035）；湖南省研究生科研创新项目（CX2011B399）

Effect of Buffer Layers on the Properties of Al-Doped ZnO Films

(College of Physics and Electronic Engineering,Jishou University,Jishou 416000,Hunan China）

Online:2013-05-25 Published:2013-07-18

摘要/Abstract

摘要：采用射频磁控溅射法分别在ZnO缓冲层和Al2O3缓冲层上制备Al掺杂ZnO(AZO)薄膜，利用X射线衍射仪（XRD）、扫描电子显微镜（SEM）、紫外-可见分光光度计、霍尔测试仪等仪器对薄膜的光电特性进行表征.XRD分析结果表明，加入缓冲层的薄膜具有更好的c轴择优取向，薄膜的表面平整，结晶质量有所改善，薄膜在可见光范围内的平均透过率超过80%.引入ZnO缓冲层制备的AZO薄膜的最低电阻率为5.8×10-4 Ω·cm，导电性能得到明显提高.

关键词： AZO薄膜, 缓冲层, 透过率, 光电特性

Abstract: AZO films with Al₂O₃ and ZnO buffer layers were deposited by RF magnetron sputtering.The structure and optoelectronic properties of AZO films were analyzed by some characterization instruments,such as X-ray diffractometer (XRD),scanning electron micro-scope (SEM),UV-visible spectrophotometer,Hall test.The results show that the films with buffer layers have better c-axis preferred orientation,and smooth surface.The crystal quality has been improved.The transmittance of films is over 80% in the visible range.AZO films deposited on ZnO buffer layer have the lowest resistivity of 5.8×10^－4 Ω·cm,and the conductive property of the films is improved obviously.

Key words: AZO thin film, buffer layer, transmittance, optoelectronic properties

李长山, 赵鹤平, 肖立娟, 郝嘉伟. 缓冲层对AZO薄膜的性能影响[J]. journal6, 2013, 34(3): 31-34.

LI Chang-Shan, ZHAO He-Ping, XIAO Li-Juan, HAO Jia-Wei. Effect of Buffer Layers on the Properties of Al-Doped ZnO Films[J]. journal6, 2013, 34(3): 31-34.

参考文献

[1] 徐成海,陆峰,谢元华.氧化锌铝透明导电膜 [J].真空电子技术,2003(6):39-49.

[2] BENEKING C,RECH B,WIEDER S,et al.Recent Developments of Silicon Thin Film Solar Cells on Glass Substrates [J].Thin Solid Films,1999,351(1/2):241-246.

[3] BAE S H,LEE S Y,JIN B J,et al.Growth and Characterization of ZnO Thin Films Grown by Pulsed Laser Deposition [J]．Appl. Surf. Sci.,2001（169-170）:525-528.

[4] FU Z,LIN B,ZU J.Photoluminescence and Structure of ZnO Films Deposited on Si Substrates by Metal-Organic Chemical Vapor Deposition [J].Thin Solid Films,2002,402(1-2):302-306.

[5] KIM YOUNGSUNG,TAI WEONPIL.Electrical and Optical Properties of A1-Doped ZnO Thin Films by Sol-Gel Process [J].Appl. Surf. Sci.,2007,253(11):4 911-4 916.

[6] PARMOD SAGAR,SHISHODIA P K,MEHRA R M.Influence of pH Value on the Quality of Sol-Gel Derived ZnO Films [J].Appl. Surf.,Sci.,2007,253(12):5 419-5 424.

[7] 王涛,刁训刚,丁芃,等.磁控溅射低温制备ZnO：A1透明肆电膜及其特性研究 [J].真空科学与技术学报,2007,27（6）：511-516.

[8] HSU C Y,KO T F,HUANG Y M.Influence of ZnO Buffer Layer on AZO Film Properties By Radio Frequency Magnetron Sputtering [J].Journal of the European Ceramic Society,2008,28（16）：3 065-3 070.

[9] MANO J K,MEHRA R M,WAKHARA A,et al.Epitaxial Growth of High Quality ZnO:A1 Film on Silicon with a Thin γ-Al2O3 Buffer Layer [J].J. Appl. Phys.,2003,93(7):3 837-3 843.

[10] OHKUBO I,MSTSUMOTO Y,OHTOMO A,et al.Investigation of ZnO/Sapphire Interface and Formation of ZnO Nanocrystalline by Laser MBE [J].Appl. Surf. Sci.,2000,159:514-519.

[11] PEI Z L,SUN C,TAN M H,et al.Optical and Electrical Properties of Direct-Current Magnetron Sputtered ZnO:Al Films [J].Appl. Phys,2001,90(7):3 432-3 436.

[12] CHEN M,PEI Z L,WANG X,et al.Structural,Electrical and Optical Properties of Transparent Conductive Oxide ZnO:Al Films Prepared by dc Magnetron Reactive Sputtering [J].J. Vac. Sci. Technol,2001,19(3):963-970.

缓冲层对AZO薄膜的性能影响

Effect of Buffer Layers on the Properties of Al-Doped ZnO Films

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