GeSe纳米电子器件整流特性的掺杂调控

doi:10.13438/j.cnki.jdzk.2022.04.008

吉首大学学报（自然科学版） ›› 2022, Vol. 43 ›› Issue (4): 42-46.DOI: 10.13438/j.cnki.jdzk.2022.04.008

GeSe纳米电子器件整流特性的掺杂调控

程杨名，廖文虎

（1.吉首大学信息科学与工程学院，湖南吉首 416000；2.吉首大学物理与机电工程学院，湖南吉首 416000）

出版日期:2022-07-25 发布日期:2022-10-28
通讯作者: 廖文虎(1978—)，男，湖北宜昌人，吉首大学物理与机电工程学院教授，硕士生导师，主要从事半导体光电器件原理与设计研究.
作者简介:程杨名(1994—)，男，湖北黄冈人，吉首大学信息科学与工程学院硕士研究生，主要从事半导体光电器件原理与设计研究
基金资助:
国家自然科学基金资助项目(11264013)；湖南省自然科学基金面上项目(2021JJ30549)；湖南省教育厅重点项目(18A293)；吉首大学研究生科研项目(JDY21075)

Doping Regulation of Rectification Characteristics of GeSe Nanoelectronic Devices

CHENG Yangming,LIAO Wenhu

(1.School of Information Science and Engineering,Jishou University,Jishou 416000,Hunan China;2.School of Physics and Electromechanical Engineering,Jishou University,Jishou 416000,Hunan China)

Online:2022-07-25 Published:2022-10-28

摘要/Abstract

摘要：运用密度泛函理论和非平衡格林函数相结合的方法，研究了第Ⅴ主族原子（P，As，Sb）替位掺杂条件下不同中心半导体沟道长度的GeSe纳米电子器件的整流特性.结果表明，第Ⅴ族原子局部替位掺杂的扶手椅型GeSe纳米带在中心半导体沟道5.1 nm长度范围内，在正偏压下不同中心半导体沟道长度的扶手椅型GeSe纳米带电流随着电压的增大而增大；在负偏压下当中心半导体沟道长度从1.7 nm增加至3.4 nm时，电流不随电压的变化而变化，继续增大中心半导体沟道长度，电流大小接近于0，器件呈现显著的整流特性.

关键词： GeSe纳米带, 整流, 替位掺杂, 电流-电压特性

Abstract: The rectification characteristics of GeSe nanoelectronic devices with different channel length of the central semiconductor doped with group V atomic substitution is investigated by using a combination of density general function theory and nonequilibrium Green's function.Results that:under positive bias,the current of armchair germanium selenide nanoribbons with 5.1 nm central semiconductor channel lengths increases with increasing voltage;while under negative bias,the current does not vary with voltage as the central semiconductor channel length increases from 1.7 nm to 3.4 nm;the magnitude is close to zero when the channel length of the central semiconductor continues to increase,and the devices exhibit significant rectification characteristics.

Key words: GeSe nanoribbons, rectification, substitution doping, current-voltage characteristics

程杨名, 廖文虎. GeSe纳米电子器件整流特性的掺杂调控[J]. 吉首大学学报（自然科学版）, 2022, 43(4): 42-46.

CHENG Yangming, LIAO Wenhu. Doping Regulation of Rectification Characteristics of GeSe Nanoelectronic Devices[J]. Journal of Jishou University(Natural Sciences Edition), 2022, 43(4): 42-46.

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GeSe纳米电子器件整流特性的掺杂调控

Doping Regulation of Rectification Characteristics of GeSe Nanoelectronic Devices

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